Samsung is expected to more than double output of its HBM4 and HBM4E DRAM
Samsung plans to more than double HBM4 and HBM4E production next year, driven by a 2.5-fold increase in glass carrier cleaning volume. Industry sources cite a rise from 20,000 to 50,000 sheets monthly. This supports 12-layer stacks for Nvidia and other customers, shifting the product mix from 40% to 80% HBM4 family chips.
Samsung Electronics intends to significantly expand manufacturing of its sixth and seventh generation high bandwidth memory chips. The company plans to raise outsourced cleaning for glass carriers from 20,000 sheets monthly to 50,000 next year. This increase supports a production shift where the HBM4 family share rises from 40% to 80% of total output. Industry observers connect this material scaling to a potential twofold growth in chip shipments. These chips feature 12-layer stacks that serve major clients like Nvidia for advanced computing tasks. The shipment mix shift indicates a strategic focus on higher value memory products within the overall lineup. Total HBM wafer input is projected to grow from roughly 180,000 to 250,000 units monthly. This expansion positions the manufacturer to meet rising demand for high bandwidth memory solutions in the semiconductor market. Precise future yield rates and final production volumes remain unknown to the public. Analysts note that glass carrier reuse and varying process loading methods affect actual consumption figures. While samples were provided to customers, the final market share outcome has not been confirmed. Specific details about long term demand sustainability beyond the next year are not provided in current reports.